Han, YH Choi, IH Moon, S Son, CS 2024-01-21T06:03:29Z 2024-01-21T06:03:29Z 2021-09-04 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/137005 In this paper, we present novel fabrication of new bolometric material with high TCR. and low resistance for uncooled IR detectors. Tungsten was co-sputtered with vanadium by a conventional RF sputter method, and the deposited vanadium-tungsten metal thin films were oxidized at 573 K for various times. Vanadium metal could not be oxidized easily at low temperature, but the tungsten addition gave rise to easy oxidation, even at the low temperature of 573 K. As a result, we could obtain very high TCR., over -3.0 %/K, at relatively low device resistance below 100 kOmega. These are very remarkable results. For the application of fabricated V-W-O film to a microbolometer, we also performed some experiments concerning patterning processes such as photolithography and etching. So, we established process conditions for the patterning of V-W-O film. English KOREAN PHYSICAL SOC ARRAY Characteristics of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S902 - S905 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S902 S905 scie scopus kci ART000961135 000226119400103 2-s2.0-12744281840 Physics, Multidisciplinary Physics Article; Proceedings Paper ARRAY microbolometer TCR vanadium-tungsten-oxide oxidation