Kwon, YS Il Shim, S Kim, SI Kim, YH Choi, IH 2024-01-21T06:03:36Z 2024-01-21T06:03:36Z 2021-09-04 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/137007 The etch stop process of SrBi2Ta2O9 (SBT) over CeO2 in Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) is reported in this paper. The etch stop of ferroelectric thin film on a silicon surface without damage is important for the self-aligned gate structure process in the fabrication of the single-transistor-type ferroelectric random access memory. A high vertical etching angle is also necessary for high integration. We investigated the etch rate of SBT and of Si and CeO2 which were used as a buffer layer to improve the interface between SBT and silicon, with various Ar/Cl-2 gas mixtures, ICP powers and BF bias powers in ICP-RIE. The highest etching selectivity of SBT/CeO2 and SBT/Si was 6.8 and 0.3 respectively. The vertical angle of SBT was 82 degrees. SEM images and XPS surface analyses showed good etch stop characteristics of the buffer layer without damage to the silicon surface. English KOREAN PHYSICAL SOC PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE ELECTRICAL-PROPERTIES FABRICATION Etch stop characteristics of SrBi2Ta2O9 thin film by using CeO2 buffer layer Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S708 - S711 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S708 S711 scie scopus kci ART000962864 000226119400055 2-s2.0-12744271512 Physics, Multidisciplinary Physics Article; Proceedings Paper PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE ELECTRICAL-PROPERTIES FABRICATION ICP-RIE etch stop etch rate selectivity