Kim, HB Son, JH Whang, CN Chae, KH 2024-01-21T06:05:52Z 2024-01-21T06:05:52Z 2021-09-05 2004-11-22 0040-6090 https://pubs.kist.re.kr/handle/201004/137048 The SiO2/Si/SiO2 thin films were fabricated by ion beam sputtering deposition and electron beam evaporation, respectively. Photoluminescence was measured from the samples deposited, annealed at high temperature, and/or irradiated by Si ions. Even though the photoluminescence associated with Si nanocrystals was obtained from the samples prepared by two kinds of deposition method; in the case of sample deposited by electron beam evaporation, a pre-annealing process was required to get the photoluminescence spectrum contrary to sample made by ion beam sputtering deposition. After the same process was performed with the samples deposited by two deposition methods, the photoluminescence from the samples has been measured differently each other. We discuss the observed difference of the photoluminescence in temis of defect-related photoluminescence and electron spin resonance. (C) 2004 Elsevier B.V All rights reserved. English ELSEVIER SCIENCE SA ROOM-TEMPERATURE SILICON DIOXIDE LUMINESCENCE LIGHT NANOCRYSTALS BLUE Comparison of visible photoluminescence from Si ion-irradiated SiO2/Si/SiO2 films fabricated by ion beam sputtering deposition and electron beam evaporation Article 10.1016/j.tsf.2004.03.033 1 THIN SOLID FILMS, v.467, no.1-2, pp.176 - 181 THIN SOLID FILMS 467 1-2 176 181 scie scopus 000224185100029 2-s2.0-4444247570 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article ROOM-TEMPERATURE SILICON DIOXIDE LUMINESCENCE LIGHT NANOCRYSTALS BLUE photolummescence silicon nanocrystals ion irradiation