Han, IK Heo, DC Song, JD Lee, JI 2024-01-21T06:09:10Z 2024-01-21T06:09:10Z 2021-09-05 2004-11 0374-4884 https://pubs.kist.re.kr/handle/201004/137110 We have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones. English KOREAN PHYSICAL SOC Study on superluminescent diodes using InGaAs-InAs chirped quantum dots Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1193 - 1195 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 5 1193 1195 scie scopus kci ART000901876 000225146200012 2-s2.0-10444243342 Physics, Multidisciplinary Physics Article; Proceedings Paper quantum dots superluminescent diodes atomic layer epitaxy