Kim, IS Kim, YM Choi, IH Hong, SK Kim, WS Il Shim, S Kim, YT Kim, YH 2024-01-21T06:09:29Z 2024-01-21T06:09:29Z 2021-09-02 2004-11 1058-4587 https://pubs.kist.re.kr/handle/201004/137116 Effect of neodymium substitution on the ferroelectric properties of Bi4Ti3O12 was investigated using a sol-gel method. We successfully synthesized 10 wt% homogeneous sol-gel solution of Bi3.15Nd0.85Ti3O12 (BNT) with 12% excess bismuth content. BNT thin films were fabricated on the Pt/TiO2/SiO2/Si substrates by spin coating deposition technique. The final film composition of Bi3.15Nd0.85Ti3O12 was obtained by Rutherford backscattering spectroscopy analysis. The 200-nm-thick BNT films have a strong (117) XRD peak with suppressed (00l) peaks due to the substitution of Nd, and the remanent polarization (2P(r)) value of Pt/BNT/Pt structure is 48 muC/cm(2) at 7V, which is significantly greater than those of other ferroelectric thin films such as PZT SBT and BLT. English TAYLOR & FRANCIS LTD BISMUTH TITANATE DOMAIN-STRUCTURE EVOLUTION Sol-gel derived Nd-substituted Bi4Ti3O12 thin film and its electrical properties Article 10.1080/10584580490893060 1 INTEGRATED FERROELECTRICS, v.65, pp.193 - 201 INTEGRATED FERROELECTRICS 65 193 201 scie scopus 000226089500023 2-s2.0-33751169815 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper BISMUTH TITANATE DOMAIN-STRUCTURE EVOLUTION ferroelectric memory Bi-layered structure BNT excess bismuth