Kim, IS Kim, YM Choi, IH Kim, SI Kim, YH Yoo, DC Lee, JY Son, CS 2024-01-21T06:09:53Z 2024-01-21T06:09:53Z 2021-09-01 2004-11 0374-4884 https://pubs.kist.re.kr/handle/201004/137123 The effect of remote oxygen plasma rapid thermal annealing (RTA) on the characteristics of Pt/SrBi2Nb2O9(SBN)/Pt capacitors is investigated. Remote oxygen plasma RTA can provide reactive oxygen, leading to improving the oxygen deficiencies. It is advantageous to reduce the thermal budget, resulting in smoother surface morphology. In addition, electrical properties of SBN films are enhanced, even at relatively lower temperature than the conventional furnace annealing in oxygen ambient. The film annealed by remote oxygen plasma RTA exhibits larger remnant polarization (2P(r)) of 22.6 muC/cm(2) at +/- 5 V and lower leak-age current density of 1.21 X 10(-8) A/cm(2) at the applied voltage of 5 V, compared with furnace-annealed films. Therefore, remote oxygen plasma RTA is considered to be a promising method to reduce the thermal budget as well as to enhance electrical properties of the SBN films. English KOREAN PHYSICAL SOC THIN-FILMS SRBI2TA2O9 SRBI2NB2O9 Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1275 - 1278 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 5 1275 1278 scie scopus kci 000225146300018 2-s2.0-10444260508 Physics, Multidisciplinary Physics Article; Proceedings Paper THIN-FILMS SRBI2TA2O9 SRBI2NB2O9 ferroelectrics SBN thin films oxygen plasma rapid thermal annealing