Song, JD Choi, WJ Kim, JM Chang, KS Lee, YT 2024-01-21T06:11:17Z 2024-01-21T06:11:17Z 2021-09-04 2004-10-01 0022-0248 https://pubs.kist.re.kr/handle/201004/137148 Using digital-alloy InGaAlAs, 1.55 mum InGaAs/InGaAlAs multi-quantum wells were fabricated. It was found that the linewidth of 10-photoluminescence (PL) (5.7meV) is narrower than that of conventional InGaAs/In(Ga)AIAs multi-quantum wells grown using present state-of-the-art growth methods. The narrower linewidth is attributed to the elongated effective-well-width and the increased 3 dimensional properties, due to carrier tunneling through the digital-alloy InGaAIAs barrier. The standard deviation of 300 K-PL peak wavelengths over the entire 2-in. wafer is 1.8 rim and the area ratio of the uniform PL peak intensity is approximately 64% of the entire wafer. This is the first report on this material system. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY DECOMPOSITION SOURCES QUANTUM-WELLS LASERS GAP INP HETEROSTRUCTURES SUPERLATTICES GAAS MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells Article 10.1016/j.jcrysgro.2004.06.037 1 JOURNAL OF CRYSTAL GROWTH, v.270, no.3-4, pp.295 - 300 JOURNAL OF CRYSTAL GROWTH 270 3-4 295 300 scie scopus 000224290100002 2-s2.0-4544263540 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article MOLECULAR-BEAM EPITAXY DECOMPOSITION SOURCES QUANTUM-WELLS LASERS GAP INP HETEROSTRUCTURES SUPERLATTICES GAAS characterization decomposition sources molecular beam epitaxy quantum wells semiconducting III-V materials