Jung, D Eom, J Chang, J Song, JD Han, SH 2024-01-21T06:11:20Z 2024-01-21T06:11:20Z 2021-09-04 2004-10-01 0021-4922 https://pubs.kist.re.kr/handle/201004/137149 A novel active magnetoelectronic device consisting of a ferromagnetic film and gate electrodes on a GaAs/AlGaAs heterostructure has been fabricated and characterized. Magnetization of the ferromagnetic film is manipulated by external magnetic field which is applied in parallel to the ferromagnetic film axis. Magnetic fringe field at the edge of the ferromagnetic film gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic field sweep. When negative voltage is applied to the gate electrodes, the Hall voltage has increased dramatically. The Hall voltage can be amplified by a factor more than 200. English JAPAN SOC APPLIED PHYSICS MAGNETOQUENCHED SUPERCONDUCTING VALVE INJECTION Gate controlled hall effect devices Article 10.1143/JJAP.43.L1305 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.10A, pp.L1305 - L1308 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 10A L1305 L1308 scie scopus 000224737000023 2-s2.0-10444282809 Physics, Applied Physics Article MAGNETOQUENCHED SUPERCONDUCTING VALVE INJECTION Hall effect magnetoelectronic device fringe field two dimensional electron gas