Kim, JS Kim, EK Kim, HJ Yoon, E Park, IW Park, YJ 2024-01-21T06:13:48Z 2024-01-21T06:13:48Z 2021-09-05 2004-10 0370-1972 https://pubs.kist.re.kr/handle/201004/137195 We have investigated the electrical property of InGaN quantum dots (QDs) embedded in GaN layer using capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. The apparent activation energy was observed 0.43 eV below the conduction band edge of barrier layers in InGaN/GaN QDs . The capture barrier height of InGaN QDs was measured more than about 0.17 eV, showing the existence of strain between QDs and barrier layers. Thus, the bound state of QDs was estimated as 0.26 eV apart from the conduction band edge of the GaN. English WILEY-V C H VERLAG GMBH Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy Article 10.1002/pssb.200405068 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.12, pp.2811 - 2815 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 241 12 2811 2815 scie scopus 000224488800041 2-s2.0-7044264630 Physics, Condensed Matter Physics Article; Proceedings Paper DLTS InGaNQD strain MOCVD