Son, CS Kim, S Kim, YH Han, IK Kim, YT Wakahara, A Choi, IH Lopez, HC 2024-01-21T06:14:04Z 2024-01-21T06:14:04Z 2021-09-05 2004-10 0374-4884 https://pubs.kist.re.kr/handle/201004/137200 Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er3+ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identified as Er3+ transitions from the H-5(11/2) and the S-4(3/2) levels to the I-4(15/2) ground state. The stronger peaks in the 5 x 10(14) cm(-2) Sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, indicate that some damage remains in the 1 x 10(15) cm(-2) sample. English KOREAN PHYSICAL SOC ELECTROLUMINESCENCE EMISSION LAYER EU Photoluminescence of Er-implanted GaN Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.4, pp.955 - 958 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 4 955 958 scie scopus kci 000224537900030 2-s2.0-8644240324 Physics, Multidisciplinary Physics Article ELECTROLUMINESCENCE EMISSION LAYER EU Er GaN implantation photoluminescence