Kim, YG Joh, YS Song, JH Sim, ED Baek, KS Chang, SK Lee, JI 2024-01-21T06:31:08Z 2024-01-21T06:31:08Z 2021-09-05 2004-09-13 0003-6951 https://pubs.kist.re.kr/handle/201004/137230 Strain effects on sizes and emission energies of ZnSe/ZnS quantum dots (QDs) have been investigated. The initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshifts of the ground-state emission from 4 monolayer ZnSe QDs were observed with increasing the thickness of the ZnS buffer from 20 to 40 nm. Atomic-force microscopy revealed that the blueshifts are due to a continuous QD size reduction. We estimated the emission energy as a function of the initial strain in the ZnSe QD layer, which shows that the band-gap engineering is possible through the strain modification. (C) 2004 American Institute of Physics. English AMER INST PHYSICS ISLANDS Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates Article 10.1063/1.1790035 1 APPLIED PHYSICS LETTERS, v.85, no.11, pp.2056 - 2058 APPLIED PHYSICS LETTERS 85 11 2056 2058 scie scopus 000223923300063 2-s2.0-5444265962 Physics, Applied Physics Article ISLANDS strain quantum dots ZnSe/ZnS size modulation photoluminescence