Shon, Y Jeon, HC Park, YS Lee, WC Lee, SJ Kim, DY Kim, HS Kim, HJ Kang, TW Park, YJ Yoon, CS Chung, KS 2024-01-21T06:31:24Z 2024-01-21T06:31:24Z 2021-09-04 2004-09-06 0003-6951 https://pubs.kist.re.kr/handle/201004/137235 P-type bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently diffused with Mn by heat treatment after the evaporation of Mn on top of InP:Zn using a molecular beam epitaxy system. The characteristics of Mn-diffused InMnP:Zn were investigated by an energy dispersive x-ray spectroscopy, photoluminescence, and a superconducting quantum interference device magnetometer measurements. The samples were characterized by transmission electron microscopy and no evidence of secondary phase formation of InMnP:Zn was found. The results of energy dispersive x-ray peak displayed injected concentration of Mn near 3%. The results of photoluminescence measurement showed that optical broad transitions related to Mn appeared around 1.2 eV and it was confirmed that the transitions around 1.2 eV were Mn-related band by the diffusion of Mn into InP:Zn. Clear ferromagnetic hysteresis loops were observed at 10 and 300 K and the temperature-dependent magnetization showed ferromagnetic behavior around 300 K, which is caused by carrier-mediated ferromagnetism in InMnP:Zn. It is found that a ferromagnetic semiconductor at room temperature can be formed in diluted magnetic semiconductor based on GaMnN and InMnP additionally co-doped with Mg and Zn, respectively. (C) 2004 American Institute of Physics. English AMER INST PHYSICS P-TYPE GAN MAGNETIC-PROPERTIES MN FERROMAGNETISM EPILAYERS IONS INP Enhanced Curie temperature of InMnP : Zn-T-C similar to 300 k Article 10.1063/1.1790074 1 APPLIED PHYSICS LETTERS, v.85, no.10, pp.1736 - 1738 APPLIED PHYSICS LETTERS 85 10 1736 1738 scie scopus 000223859800027 2-s2.0-4944232597 Physics, Applied Physics Article P-TYPE GAN MAGNETIC-PROPERTIES MN FERROMAGNETISM EPILAYERS IONS INP InMnP:Zn Diluted magnetic semiconductors Curie temperature Mn-diffusion molecular beam epitaxy