Choi, HJ Seong, HK Lee, JC Sung, YM 2024-01-21T06:31:46Z 2024-01-21T06:31:46Z 2021-09-05 2004-09-01 0022-0248 https://pubs.kist.re.kr/handle/201004/137242 We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs were fabricated by chemical vapor deposition (CVD) process, and had diameters of less than or equal to 50 nm and length of several pm. X-ray diffraction and transmission electron microscopy analysis showed the single crystalline nature of NWs with a growth direction of <1 1 1>. In-situ modulation of NWs such as self-alignment of NWs on the graphite or silicon substrates, creation of homo interfaces in the NWs by the formation of twins, and doping of aluminum into NWs was also achieved by controlling the processing conditions in the CVD process. Growth and modulation of single crystalline SiC NWs could helpful to meet the requirements for the fabrication of SiC NW-based nanodevices. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION TEMPERATURE WHISKERS NANORODS Growth and modulation of silicon carbide nanowires Article 10.1016/j.jcrysgro.2004.05.094 1 JOURNAL OF CRYSTAL GROWTH, v.269, no.2-4, pp.472 - 478 JOURNAL OF CRYSTAL GROWTH 269 2-4 472 478 scie scopus 000223813300041 2-s2.0-4344716253 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION TEMPERATURE WHISKERS NANORODS controlled growth doping heterostructure alignment nano devices