Song, SK Koh, SK Lee, DY Song, KM Baik, HK 2024-01-21T06:34:03Z 2024-01-21T06:34:03Z 2021-09-05 2004-09 0021-4922 https://pubs.kist.re.kr/handle/201004/137284 A model for the electrical conductance of a semiconductive substrate with an average thickness is proposed for a region of initial growth before the appearance of a tunneling effect. Based on this model, we propose 6 different growth modes according to the film thickness, measuring in stitu electrical conductivity. As the film thickness increased, the island size was constant and then increased, while the number of islands first increased and then decreased. The proposed model may be useful for in situ study of the growth of ultrathin films prior to the onset of tunneling conductance. English JAPAN SOC APPLIED PHYSICS INDIUM TIN OXIDE THIN-FILMS IN-SITU GROWING FILMS METAL-FILMS DEPOSITION BEAM ELLIPSOMETRY SPECTROSCOPY TRANSITION Modeling and initial growth mode of ultrathin film on the basis of electrical conductivity of substrate Article 10.1143/JJAP.43.6452 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.9A, pp.6452 - 6456 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 9A 6452 6456 scie scopus 000224579000105 2-s2.0-9144238403 Physics, Applied Physics Article INDIUM TIN OXIDE THIN-FILMS IN-SITU GROWING FILMS METAL-FILMS DEPOSITION BEAM ELLIPSOMETRY SPECTROSCOPY TRANSITION electrical conductance initial growth 6 different growth modes in situ electrical conductivity