Wakahara, A Nakanishi, Y Fujiwara, T Okada, H Yoshida, A Ohshima, T Kamiya, T Kim, YT 2024-01-21T06:34:16Z 2024-01-21T06:34:16Z 2021-09-04 2004-09 1862-6300 https://pubs.kist.re.kr/handle/201004/137288 Er ions are introduced into AlxGa1-xN (0 less than or equal to x less than or equal to 1) by ion implantation to investigate the effect of Al composition on the luminescence properties of 4f(n) inner-shell transitions of Er3+. Strong and sharp emission peaks attributed to the 4f-4f transition of Er3+ are observed in ultra-violet and blue region (400-550 nm) from the samples with AlN molar fraction of x > 0.3. These photoemissions are assigned as P-2(3/2) - I-4(15/2), P-2(3/2) - I-4(13/2), P-2(3/2) - I-4(11/2), and P-2(3/2) - P-4(11/2) transitions, and the 408 nm emission, corresponding to P-2(3/2) - I-4(13/2) transition, is the strongest in the present work. As increasing the Al composition, the intensity of Er3+-related emissions is rapidly increased and the thermal quenching proper-ties is also improved. English WILEY-V C H VERLAG GMBH THIN-FILMS GAN PHOTOLUMINESCENCE CATHODOLUMINESCENCE ELECTROLUMINESCENCE LUMINESCENCE DIODES Strong blue emission from Er3+ doped in AlxGa1-xN Article 10.1002/pssa.200405006 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, no.12, pp.2768 - 2772 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 201 12 2768 2772 scie scopus 000224218000035 2-s2.0-6344221532 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper THIN-FILMS GAN PHOTOLUMINESCENCE CATHODOLUMINESCENCE ELECTROLUMINESCENCE LUMINESCENCE DIODES