Seong, HK Choi, HJ Lee, SK Lee, JI Choi, DJ 2024-01-21T06:35:34Z 2024-01-21T06:35:34Z 2021-09-05 2004-08-16 0003-6951 https://pubs.kist.re.kr/handle/201004/137311 We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100 nm and lengths of several mum. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2x10(-2) Omega cm for 0 V of gate voltage and 15 cm(2)/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties. (C) 2004 American Institute of Physics. English AMER INST PHYSICS CHEMICAL-VAPOR-DEPOSITION SIC THIN-FILMS TEMPERATURE GROWTH Optical and electrical transport properties in silicon carbide nanowires Article 10.1063/1.1781749 1 APPLIED PHYSICS LETTERS, v.85, no.7, pp.1256 - 1258 APPLIED PHYSICS LETTERS 85 7 1256 1258 scie scopus 000223233800055 2-s2.0-4444343090 Physics, Applied Physics Article CHEMICAL-VAPOR-DEPOSITION SIC THIN-FILMS TEMPERATURE GROWTH silicon carbide nanowires electrical transport optical properties photoluminescence electron mobility