Lee, KH Lee, HS Lee, JY Kim, TW Yoo, KH Yoon, YS 2024-01-21T06:35:56Z 2024-01-21T06:35:56Z 2021-09-05 2004-08-03 0025-5408 https://pubs.kist.re.kr/handle/201004/137318 Microstructual properties of Co thin films grown on p-GaAs (100) substrates at room temperature by ion beam-assisted deposition were investigated. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Co film was 32.2 Angstrom, and X-ray diffraction and selected area diffraction pattern measurements showed that Co film layers grown on GaAs (100) substrates were polycrystalline. A bright-field transmission electron microscopy image showed that the Co/p-GaAs (100) heterointerface grown at room temperature was sudden. These results provide important information on the microstructural properties for Co thin films grown on p-GaAs (100) substrates at room temperature. (C) 2004 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD INDUCED MAGNETIC-ANISOTROPY DOPED ZNO FILMS ELECTRIC PROPERTIES FE FILMS BCC CO Microstructural properties of Co thin films grown on p-GaAs (100) substrates Article 10.1016/j.materresbull.2004.04.036 1 MATERIALS RESEARCH BULLETIN, v.39, no.10, pp.1369 - 1374 MATERIALS RESEARCH BULLETIN 39 10 1369 1374 scie scopus 000222837400001 2-s2.0-3042853799 Materials Science, Multidisciplinary Materials Science Article INDUCED MAGNETIC-ANISOTROPY DOPED ZNO FILMS ELECTRIC PROPERTIES FE FILMS BCC CO thin film microstructure