Shim, SI Kwon, YS Kim, SI Kim, YT Park, JH 2024-01-21T06:38:39Z 2024-01-21T06:38:39Z 2021-09-04 2004-08 1862-6300 https://pubs.kist.re.kr/handle/201004/137368 A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y2O3. Depending on the selectivity with various Ar/Cl-2 gas mixture, we could find the acceptable thickness of Y2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation. English WILEY-V C H VERLAG GMBH Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop process Article 10.1002/pssa.200409051 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, no.10, pp.R65 - R68 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 201 10 R65 R68 scie scopus 000223613800002 2-s2.0-4444333435 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article