Kim, KM Park, YJ Son, SH Lee, SH Lee, JI Park, JH Park, SK 2024-01-21T06:38:42Z 2024-01-21T06:38:42Z 2021-09-04 2004-08 1386-9477 https://pubs.kist.re.kr/handle/201004/137369 Aligned quantum dots (QDs) were successfully formed along the <110> direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER MISFIT DISLOCATIONS SELF-ORGANIZATION FABRICATION ALIGNMENT Artificial array of InAs quantum dots on a strain-engineered superlattice Article 10.1016/j.physe.2004.04.005 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.24, no.1-2, pp.148 - 152 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 24 1-2 148 152 scie scopus 000223122700032 2-s2.0-3142671353 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper MISFIT DISLOCATIONS SELF-ORGANIZATION FABRICATION ALIGNMENT quantum-dot array alignment strain-engineering single-electron devices