Chang, J Kim, H 2024-01-21T06:38:48Z 2024-01-21T06:38:48Z 2021-09-04 2004-08 1002-0721 https://pubs.kist.re.kr/handle/201004/137371 The effect of buried misfit dislocation on the distribution of Ge self-assembled quantum dots (SAQDs) grown on a relaxed SiGe buffer layer was investigated. The strain field of arrays of buried dislocations in a relaxed SiGe buffer layer provided preferential nucleation sites for quantum dots. Burgers vector analysis using plan-view transrmlssion electron microscopy (TEM) verified that the preferential nucleation sites of Ge SAQDs depended on the Burgers vector direction of corresponding dislocations. The measurement of the lateral distance between SAQDs and dislocations together with cross-section TEM obsenation clarified that the location of SAQDs was at the intersection of the dislocation slip plane and the top surface. The misfit strain should be an additional factor governing the uniformity in size, shape and distribution of Ge SAQDs. English ELSEVIER SCIENCE BV SHAPE TRANSITION LUMINESCENCE KINETICS ISLANDS SI(001) SIZE Distribution of Ge self-assembled quantum dots on SixGe1-x buffer layers Article 1 JOURNAL OF RARE EARTHS, v.22, pp.133 - 135 JOURNAL OF RARE EARTHS 22 133 135 scie scopus 000227614200034 2-s2.0-70249103103 Chemistry, Applied Chemistry Article; Proceedings Paper SHAPE TRANSITION LUMINESCENCE KINETICS ISLANDS SI(001) SIZE misfit dislocation Ge self assembled quantum dots molecular beam epitaxy transmission electron microscopy