Lee, YH Hyun, SY Kim, YM Park, IW Kim, DH Ahn, SY Kim, JS 2024-01-21T06:38:55Z 2024-01-21T06:38:55Z 2021-09-04 2004-08 0038-1098 https://pubs.kist.re.kr/handle/201004/137373 Most studies on Co-doped TiO2 system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO2/CO/TiO2/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO2 on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si. (C) 2004 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD FILMS FERROMAGNETISM ANISOTROPY ANATASE SILICON GROWTH Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures Article 10.1016/j.ssc.2004.06.004 1 SOLID STATE COMMUNICATIONS, v.131, no.7, pp.463 - 467 SOLID STATE COMMUNICATIONS 131 7 463 467 scie scopus 000223075900009 2-s2.0-3142565139 Physics, Condensed Matter Physics Article FILMS FERROMAGNETISM ANISOTROPY ANATASE SILICON GROWTH magnetic multilayer DMS