Lee, CM Choi, SH Kim, CS Noh, SK Lee, JI Lim, KY Han, IK 2024-01-21T06:39:11Z 2024-01-21T06:39:11Z 2021-09-04 2004-08 0374-4884 https://pubs.kist.re.kr/handle/201004/137378 The photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated by varying the PL temperature and the excitation power density. The PL spectrum of InGaN/GaN MQWs exhibits a multi-like feature related to the InGaN well at low temperature, indicating a nonuniformity of the indium composition due to the miscibility between InN and GaN, which results in an exciton localization effect. With increasing excitation power density, the emission peak of the MQW exhibits a blueshift and its linewidth decreases. Based on the theory of the quantum confined Stark effect, the behavior of the MQW can be well explained. The high-energy emission is quenched quickly by increasing temperature, and the low-energy emission becomes dominant because of the different activation energy, which proves that the high-energy emission is a MQW-related emission and that the lowenergy emission is from strongly localized excitons. English KOREAN PHYSICAL SOC RECOMBINATION DYNAMICS LOCALIZED EXCITONS EMISSION TEMPERATURE SINGLE Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.2, pp.L243 - L247 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 2 L243 L247 scie scopus kci ART000936969 000223321200001 2-s2.0-4544288236 Physics, Multidisciplinary Physics Article RECOMBINATION DYNAMICS LOCALIZED EXCITONS EMISSION TEMPERATURE SINGLE InGaN/GaN-MQWs photoluminescence quantum confined Stark effect