Heo, D Han, IK Lee, JI Jeong, J 2024-01-21T06:39:36Z 2024-01-21T06:39:36Z 2021-09-01 2004-08 1041-1135 https://pubs.kist.re.kr/handle/201004/137386 We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-mum multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC QUANTUM-WELL LASERS REFRACTIVE-INDEX POWER INP ABSORPTION WAVELENGTH Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure Article 10.1109/LPT.2004.829772 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.16, no.8, pp.1801 - 1803 IEEE PHOTONICS TECHNOLOGY LETTERS 16 8 1801 1803 scie scopus 000222884300003 2-s2.0-4043107154 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article QUANTUM-WELL LASERS REFRACTIVE-INDEX POWER INP ABSORPTION WAVELENGTH asymmetric separate confinement heterostructure (SCH) high p-doping light-current (L-I). rollover