Lee, YH Lee, CW Kim, DH Jang, YT Choi, CH Shin, KS Ju, BK 2024-01-21T06:41:04Z 2024-01-21T06:41:04Z 2021-09-05 2004-07-11 0009-2614 https://pubs.kist.re.kr/handle/201004/137412 We describe the gate coupling of a rooted grown suspended carbon nanotube (CNT) between two microsized catalytic contact electrodes using a direct parallel growth technique. All-shell Multiwalled carbon nanotubes (MWNTs) were bonded to contact electrodes because MWNTs were grown from the electrodes. The response characteristics of the devices with the gate voltage show typical p-type field effect transistor function at a high-temperature regime and asymmetric Coulomb blockage behavior in low temperatures. Results of the observation suggest that our unique structure, i.e., catalytic ferromagnetic electrode/all-shell bonded MWNT/ferromagnetic electrode, made by direct parallel growth may be a promising key element for nanoelectronics and nanoelectro-mechanical-systems (NEMS). (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV ELECTRICAL BREAKDOWN TRANSISTOR Gating effect of suspended multiwalled carbon nanotube with all-shell rooted from electrodes: parallel growth from ferromagnetic catalytic contact Article 10.1016/j.cplett.2004.05.076 1 CHEMICAL PHYSICS LETTERS, v.392, no.4-6, pp.319 - 323 CHEMICAL PHYSICS LETTERS 392 4-6 319 323 scie scopus 000222553100007 2-s2.0-3042530816 Chemistry, Physical Physics, Atomic, Molecular & Chemical Chemistry Physics Article ELECTRICAL BREAKDOWN TRANSISTOR