Kwak, NM Kim, HJ Kim, HT Choi, WJ Cho, K 2024-01-21T06:41:19Z 2024-01-21T06:41:19Z 2021-09-04 2004-07-05 0895-2477 https://pubs.kist.re.kr/handle/201004/137417 The heat frequency dependency of the optical heterodyne mixing characteristics of a transferred-substrate AlInAs/GaInAs double heterojunction bipolar transistor (DHBT) have been investigated from 1 to 25 GHz in 1-GH7 steps at a center wavelength of 1319 mn. The experimental results show a high-speed but low-responsivity response followed by a low-speed but high-responsivity response. The 3-dB bandwidth of the low-speed response is 3 GHz. Various ways of increasing the high frequency responsivity are discussed. (C) 2004 Wiley Periodicals, Inc. English WILEY PHOTOTRANSISTORS INP/INGAAS HBT Study of optical heterodyne mixing characteristics in an A1lnAs/GalnAs transferred-substrate double heterojunction bipolar transistor Article 10.1002/mop.20213 1 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.42, no.1, pp.74 - 77 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 42 1 74 77 scie scopus 000221538400025 2-s2.0-2542560569 Engineering, Electrical & Electronic Optics Engineering Optics Article PHOTOTRANSISTORS INP/INGAAS HBT transferred-substrate DHBT optical heterodyne mixing responsivity microwave photonic carrier Fabry-Perot etalon