Son, SH Cho, KH Hwang, SW Kim, KM Park, YJ Yu, YS Ahn, D 2024-01-21T06:41:38Z 2024-01-21T06:41:38Z 2021-09-02 2004-07-01 0021-8979 https://pubs.kist.re.kr/handle/201004/137423 Quantum dot transistors and nanowire transistors are fabricated from a metal-semiconductor field-effect-transistor-type wafer and are characterized at low temperatures. Clear single-electron tunneling and various quantum effects, such as transport through excited states and negative differential resistance, are observed in our wire device. Our data suggest that the potential fluctuation of the heavily doped GaAs layer has a much larger characteristic length than interimpurity spacing, and that this is due to the low ionization rate (approximately 10%) of the dopant atoms at 4.2 K. (C) 2004 American Institute of Physics. English AMER INST PHYSICS SINGLE-ELECTRON TRANSISTORS QUANTIZED CONDUCTANCE CHARGE-TRANSPORT DOT DENSITY GAAS GAS Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices Article 10.1063/1.1755438 1 JOURNAL OF APPLIED PHYSICS, v.96, no.1, pp.704 - 708 JOURNAL OF APPLIED PHYSICS 96 1 704 708 scie scopus 000222093300113 2-s2.0-3142766452 Physics, Applied Physics Article SINGLE-ELECTRON TRANSISTORS QUANTIZED CONDUCTANCE CHARGE-TRANSPORT DOT DENSITY GAAS GAS MESFET quantum devices heavily doped layer e-beam lithography