최지원 정연식 윤석진 김태환 Young-Soo No Won-Kook Kim 2024-01-21T06:42:26Z 2024-01-21T06:42:26Z 2022-01-10 2004-07 1229-7801 https://pubs.kist.re.kr/handle/201004/137437 The chemical etching of sapphire substrates was performed to produce smooth surfaces on an atomic scale. The sapphire surface etched by using a H2SO4 solution showed a pit-free morphology and was very smooth as much as rms=0.13 nm, that etched by using a mixture of H2SO4 and H3PO4 contained large pits with rms=0.34 nm. The rmss and the number of the pits increased with increasing etching temperature. The sapphire etched by using H2SO4 at 320℃ had the best surface. These results provide important information on the effects of etching treatment on the structural properties of sapphire for the growth of high-quality epilayers. 한국세라믹학회 Sulfuric Acid Treatment of Sapphire Substrates for Growth of High-Quality Epilayers Article 2 한국세라믹학회지, v.41, no.7, pp.1 - 1 한국세라믹학회지 41 7 1 1 kci ART001096664 chemical etching of sapphire pit-free morphology H2SO4* Corresponding author. Tel:+82-2-958-5562fax:+82-2958-6851E-mail address: wkchoi@kist.re.kr1. IntroductionPotential applications of GaN or ZnO thin films in electronic and optoelectronic devic chemical etching of sapphire pit-free morphology H2SO4* Corresponding author. Tel:+82-2-958-5562fax:+82-2958-6851E-mail address: wkchoi@kist.re.kr1. IntroductionPotential applications of GaN or ZnO thin films in electronic and optoelectronic devic