Kim, SP Lee, SC Lee, KR Chung, YC 2024-01-21T06:43:17Z 2024-01-21T06:43:17Z 2021-09-02 2004-07 1385-3449 https://pubs.kist.re.kr/handle/201004/137453 Using molecular dynamics simulations, we investigated the interface structures and the growth behaviors of nano-scale Al/Co/Al multilayers. For Co on Al(001), interface mixing occurred irrespective of the incident energy (K-i). Interestingly, increasing the incident energy increased the thickness of the mixing layers and decreased the roughness of the Co surface. In the case of Al on Co(001), in contrast to the case of Co/Al, interface mixing could not be found, especially for low incident energy. From these investigations, an optimized deposition technique is proposed that improves the quality of the interface/surface of the deposited thin film by controlling the incident adatom energies. English SPRINGER MAGNETIC-PROPERTIES EPITAXIAL-GROWTH FILM GROWTH AL SURFACE CO SANDWICHES AU AG(110) METALS Atomic mixing behavior of Co/Al(001) vs. Al/fcc-Co(001): Molecular dynamics simulation Article 10.1007/s10832-004-5119-6 1 JOURNAL OF ELECTROCERAMICS, v.13, no.1-3, pp.315 - 320 JOURNAL OF ELECTROCERAMICS 13 1-3 315 320 scie scopus 000226236100052 2-s2.0-11444254860 Materials Science, Ceramics Materials Science Article; Proceedings Paper MAGNETIC-PROPERTIES EPITAXIAL-GROWTH FILM GROWTH AL SURFACE CO SANDWICHES AU AG(110) METALS Al/Co/Al magnetic nano thin films interface structure molecular dynamics simulation