Kim, JS Park, BH Choi, HJ Lee, JK 2024-01-21T06:43:39Z 2024-01-21T06:43:39Z 2021-09-02 2004-07 0374-4884 https://pubs.kist.re.kr/handle/201004/137460 Ba0.5Sr0.5TiO3 (BST-0.5) thin films of thickness 300 nm were deposited on MgO(001) single crystalline substrates by on-axis rf magnetron sputtering at 650 degreesC. X-ray diffraction data indicate that the BST-0.5 thin films are epitaxially grown on MgO substrates. The orientation relationships are found to be BST-0.5(001)//MgO(001) and BST-0.5[100]//MgO[100]. The stoichiometriy of BST-0.5 thin film is confirmed by Rutherford backscattering. For a stoichiometric BST-0.5 film, the typical dielectric tunability and dielectric loss measured at room temperature and 1 MHz are 33.7% and 0.0057, respectively. English KOREAN PHYSICAL SOC DIELECTRIC-PROPERTIES CERAMICS MGO Study on Ba0.5Sr0.5TiO3 thin films grown at a low temperature applicable to microwave tunable devices Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.1, pp.194 - 196 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 1 194 196 scie scopus kci 000222795800044 2-s2.0-3843128435 Physics, Multidisciplinary Physics Article; Proceedings Paper DIELECTRIC-PROPERTIES CERAMICS MGO Ba0.5Sr0.5TiO3 thin films epitaxially tunability dielectric loss