Jun, KI Lee, JH Shin, KH Rhie, K Lee, BC 2024-01-21T06:43:46Z 2024-01-21T06:43:46Z 2021-09-02 2004-07 0018-9464 https://pubs.kist.re.kr/handle/201004/137462 The effect of field annealing on the magnetic tunnel junctions (MTJs) with an artificial antiferromagnetic layer is investigated. Samples, which were grown under the same condition, are annealed with low (200-Oe) and high (1-kOe) magnetic fields. The rotation of the pinned direction is observed for the sample annealed at high magnetic field without decrease of tunneling magnetoresistance by varying the applied field direction. This result provides a method to adjust the pinned direction of the MTJ, which may be critical in switching a magnetic RAM (MRAM) cell. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Rotation of the pinned direction in artificial antiferromagnetic tunnel junctions by field annealing Article 10.1109/TMAG.2004.829320 1 IEEE TRANSACTIONS ON MAGNETICS, v.40, no.4, pp.2299 - 2301 IEEE TRANSACTIONS ON MAGNETICS 40 4 2299 2301 scie scopus 000223446700102 2-s2.0-4444342145 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper artificial anitferromagnetic (AAF) layer field annealing magnetic tunnel junction (MTJ) tunneling magnetoresistance (TMR)