Kim, SS Cheong, H Song, JD Park, YM Shin, JC Park, YJ Choi, WJ Lee, JI 2024-01-21T06:44:11Z 2024-01-21T06:44:11Z 2021-09-02 2004-07 0374-4884 https://pubs.kist.re.kr/handle/201004/137470 Photoluminescence (PL) and contactless electroreflectance (ER) spectra of InAs quantum dots (QDs) grown on GaAs substrates using either the standard Stranski-Krastanow (SK) method or the atomic layer epitaxy (ALE) method are compared. The PL measurements were carried out at temperatures between 8 K and 150 K, and the ER measurements between 90 K and 295 K. The PL peak energies correlate well with the lowest energy transition feature in the ER, spectra. Signals from the wetting layers are also observed in the ER spectra near the GaAs bandgap energy. The PL and ER linewidths are narrower for the ALE QDs than for the SK QDs, indicating a better size uniformity. In addition, higher energy quantum-dot transitions are observed in the ER. spectra of ALE QDs, which is consistent with a better size uniformity. English KOREAN PHYSICAL SOC INAS GROWTH LAYER GAAS Photoluminescence and electromodulation study of InAs/GaAs quantum dots Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.1, pp.145 - 148 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 1 145 148 scie scopus kci ART000953101 000222795800033 2-s2.0-3843080586 Physics, Multidisciplinary Physics Article; Proceedings Paper INAS GROWTH LAYER GAAS electroreflectance photolummescence InAs quantum dots