Jung, YS No, YS Kim, JS Choi, WK 2024-01-21T06:45:08Z 2024-01-21T06:45:08Z 2021-09-02 2004-06-15 0022-0248 https://pubs.kist.re.kr/handle/201004/137484 ZnO thin films were deposited on c-plane sapphire substrates on the ZnO homo-buffer layer with different thickness and growth temperature by plasma assisted molecular beam epitaxy. The effects of buffer-layer growth variables on the properties of the ZnO films were investigated and discussed on a collective basis compared with other reports. RHEED patterns were taken over different buffer layer surfaces and the initial growth mode of ZnO buffer layer was recognized as Stranski-Krastanov mode by the direct observation of a streaky pattern superimposed with a spotty pattern of thicker than 8 nm. Through examining the XRD theta-rocking curve of ZnO (0 0 0 2) peak, it seems that the crystalline quality of the ZnO thin film grown on the ZnO buffer layer was gradually improved with the increase of the buffer layer thickness. Strong near band-edge emission at 378 nm was well observed without deep-level emission at the ZnO films grown on the 15 nm, buffer layer prepared at 500-600degreesC, and those grown on the thicker buffer layer or prepared at 400degreesC or 700degreesC showed deep-level emission around 510 nm. In Hall measurement, the ZnO films showing deep-level emission gave also carrier concentration higher than 1 x 10(19)/cm(3) and those with better crystalline quality seemed to have high mobility of mu = 40-57 cm(2)/V S. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER GAN SAPPHIRE PHOTOLUMINESCENCE HETEROEPITAXY TEMPERATURE FABRICATION BAND The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy Article 10.1016/j.jcrysgro.2004.03.010 1 JOURNAL OF CRYSTAL GROWTH, v.267, no.1-2, pp.85 - 91 JOURNAL OF CRYSTAL GROWTH 267 1-2 85 91 scie scopus 000222286600012 2-s2.0-2942607949 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article GAN SAPPHIRE PHOTOLUMINESCENCE HETEROEPITAXY TEMPERATURE FABRICATION BAND crystal structure photoluminescence reflection high energy electron diffraction x-ray diffraction molecular beam epitaxy semiconducting II-VI materials