Kim, DY Kim, JS Park, BH Lee, JK Kim, JH Lee, JH Chang, J Kim, HJ Kim, I Park, YD 2024-01-21T06:45:24Z 2024-01-21T06:45:24Z 2021-09-02 2004-06-14 0003-6951 https://pubs.kist.re.kr/handle/201004/137489 Dielectric SrMoO4 thin films were deposited from Sr2FeMoO6 target in oxygen atmosphere, showing obvious M-H hysteresis loops at room temperature. It was revealed by transmission electron microscopy that SrFeO3 nanoparticles are dispersed in the SrMoO4 grains, to which the hystersis loops of the thin films are ascribed. This SrMoO4 thin film can be useful as a barrier material for Sr2FeMoO6-based devices, owing to easy fabrication process and compatibility with Sr2FeMoO6. Magnetic SrFeO3 nanoparticles are expected to enhance tunneling magnetoresistance. (C) 2004 American Institute of Physics. English AMER INST PHYSICS ROOM-TEMPERATURE MAGNETORESISTANCE PEROVSKITE GROWTH SrFeO3 nanoparticles-dispersed SrMoO4 insulating thin films deposited from Sr2FeMoO6 target in oxygen atmosphere Article 10.1063/1.1763638 1 APPLIED PHYSICS LETTERS, v.84, no.24, pp.5037 - 5039 APPLIED PHYSICS LETTERS 84 24 5037 5039 scie scopus 000221793600067 2-s2.0-3042812285 Physics, Applied Physics Article ROOM-TEMPERATURE MAGNETORESISTANCE PEROVSKITE GROWTH