Lee, JH Park, SY Jun, KI Shin, KH Hong, J Rhie, K Lee, BC 2024-01-21T07:03:49Z 2024-01-21T07:03:49Z 2021-09-02 2004-06 0370-1972 https://pubs.kist.re.kr/handle/201004/137549 The transport properties of ferromagnet/Al2O3/semiconductor tunnel junctions were investigated. Si and GaAs substrates were used, and CoFe and NiFe were taken for ferromagnets. Diode characteristics were observed in current-voltage curves. The dependences on the Al2O3 thickness and temperature were also studied. It is found that the Al2O3 layer plays a crucial role in preventing inter-diffusion at the interface. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH ELECTRICAL SPIN INJECTION Transport properties of metal/insulator/semiconductor tunnel junctions Article 10.1002/pssb.200304693 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1506 - 1509 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 241 7 1506 1509 scie scopus 000222123000030 2-s2.0-4644244864 Physics, Condensed Matter Physics Article; Proceedings Paper ELECTRICAL SPIN INJECTION FIS tunnel juction spin injection diode