Kim, SP Lee, SC Lee, KR Chung, YC 2024-01-21T07:04:02Z 2024-01-21T07:04:02Z 2021-09-02 2004-06 0021-4922 https://pubs.kist.re.kr/handle/201004/137553 The growth mechanisms at the early stage of thin-film deposition were quantitatively investigated using the molecular dynamics method, focusing on the cases of Al and Co on an fcc-Co(111) system. In the case of Al on Co(111), Al adatoms were grown basically in the layer-by-layer growth mode. Moreover, this growth behavior became more obvious with increasing substrate temperature from 80 K to 300 K. In the case of Co on Co(111), Co adatoms apparently favored the island growth mode at a low incident energy. By increasing the energy, however, the tendency towards the layer-by-layer growth mode highly increased. These could be explained by the difference in surface diffusion barrier between the two cases. English JAPAN SOC APPLIED PHYSICS TEMPERATURE EPITAXIAL-GROWTH SURFACE Molecular dynamics simulation at the early stage of thin-film deposition: Al or Co on Co(111) Article 10.1143/JJAP.43.3818 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.6B, pp.3818 - 3821 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 6B 3818 3821 scie scopus 000222615100036 2-s2.0-4444349313 Physics, Applied Physics Article; Proceedings Paper TEMPERATURE EPITAXIAL-GROWTH SURFACE magnetic nano meter thin-films molecular dynamics simulation Co-Al thin-film growth