Kim, EK Kim, JS Hwang, H Park, K Yoon, E Kim, JH Park, IW Park, YJ 2024-01-21T07:04:28Z 2024-01-21T07:04:28Z 2021-09-02 2004-06 0021-4922 https://pubs.kist.re.kr/handle/201004/137561 We have investigated the confined energy level of InAs quantum dots embedded in InP layer using deep-level transient spectroscopy (DLTS) measurement. The higher temperature for the capping layer growth yields a low activation energy (E-a = 0.56 eV) and a low barrier height (Ee(B) = 0.18 eV) whereas the lower temperature yields a high activation energy (E-a = 0.82 eV) and high barrier height (Ee(B) = 0.52 eV). It was found that the higher temperature for the growth of the capping layer provides a condition for enhancing the confinement energy in InAs QDs/InP structure. English INST PURE APPLIED PHYSICS INP Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy Article 10.1143/JJAP.43.3825 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.6B, pp.3825 - 3827 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43 6B 3825 3827 scie scopus 000222615100038 2-s2.0-4444237058 Physics, Applied Physics Article; Proceedings Paper INP deep-level transient spectroscopy quantum dot energy level InAs InP capture barrier