Park, SY Lee, JH Shin, IJ Hong, JP Shin, KH Phie, K Lee, BC 2024-01-21T07:04:59Z 2024-01-21T07:04:59Z 2021-09-02 2004-06 0031-8965 https://pubs.kist.re.kr/handle/201004/137571 Nano-size magnetic tunnel junctions (MTJs) were fabricated by using e-beam lithography and oxidizing the top ferromagnetic (free) layer with inductively coupled plasma while the junction area was covered with PR. A significant improvement in the physical properties of the MTJ has been observed compared to those patterned by conventional methods. The tunnelling magnetoresistance (TMR) was 31% for 140 x 140 nm(2) MTJ at room temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH TEMPERATURE Tunneling magnetoresistance of nano-scale magnetic tunnel junctions Article 10.1002/pssa.200304678 1 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, no.8, pp.1692 - 1695 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 8 1692 1695 scie scopus 000222401400021 2-s2.0-3142715351 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper TEMPERATURE Tunneling magnetoresistance