Lee, KI Jeun, MH Chang, JY Han, SH Ha, JG Lee, WY 2024-01-21T07:05:06Z 2024-01-21T07:05:06Z 2021-09-02 2004-06 0370-1972 https://pubs.kist.re.kr/handle/201004/137573 The spin transport in a spin-valve device incorporating Bi thin film and two ferromagnetic (FM) contacts is presented. The non-local output voltage is found to depend upon the relative magnetization state of the two FM electrodes, indicating that the spin-polarized electrons are injected from the first FM (injector) into Bi and are detected by the second FM (detector) due to spin accumulation. The observed Hanle effect supports the spin injection and detection in our device. 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim. English WILEY-V C H VERLAG GMBH INJECTION MAGNETORESISTANCE MAGNETIZATION Spin transport in an FM/Bi/FM junction Article 10.1002/pssb.200304562 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1510 - 1513 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 241 7 1510 1513 scie scopus 000222123000031 2-s2.0-4644248377 Physics, Condensed Matter Physics Article; Proceedings Paper INJECTION MAGNETORESISTANCE MAGNETIZATION spin injection Hanle effect semimetal bismuth