Yoshida, A Wakahara, A Nakanishi, Y Okada, H Ohshima, T Itoh, H Kim, YT 2024-01-21T07:05:13Z 2024-01-21T07:05:13Z 2021-09-01 2004-06 1013-9826 https://pubs.kist.re.kr/handle/201004/137574 Effects of alloy composition on PL properties of Eu and Tb implanted nitrides are investigated. Strong red emissions corresponding to the transition from D-5(0) to F-7(i) states in Eu3+ are observed at room temperature. The intensity of Eu-related luminescence increases with increasing the Al composition in AlGaN, while the decay time indicates opposite trend. From the Tb-implanted samples, sharp emissions are observed in the wavelength range of 490-650nm at low-temperature, and the strongest peak is assigned as the transition from D-5(4) to F-7(6) states in Tb3+. The luminescence intensity is increased with increasing the Al composition. Thermal quenching properties are also improved by increasing the Al composition. English TRANS TECH PUBLICATIONS LTD DOPED GAN ER ELECTROLUMINESCENCE PHOTOLUMINESCENCE EMISSION Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN Article 10.4028/www.scientific.net/KEM.270-273.890 1 ADVANCES IN NONDESTRUCTIVE EVALUATION, PT 1-3, v.270-273, pp.890 - 894 ADVANCES IN NONDESTRUCTIVE EVALUATION, PT 1-3 270-273 890 894 scie scopus 000223978300145 Materials Science, Ceramics Materials Science, Multidisciplinary Materials Science, Characterization & Testing Materials Science, Composites Physics, Applied Materials Science Physics Article; Proceedings Paper DOPED GAN ER ELECTROLUMINESCENCE PHOTOLUMINESCENCE EMISSION group-III nitride rare-earth impurity luminescence