Kim, WY Chang, JY Han, SH Chang, SG Lee, WY 2024-01-21T07:05:16Z 2024-01-21T07:05:16Z 2021-09-01 2004-06 1862-6300 https://pubs.kist.re.kr/handle/201004/137575 We present the local Hall effect in a hybrid Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single microstructured ferromagnetic element. A clear hysteresis loop was found to appear in the output signal for the cross junction with a ferromagnetic element due to the strong perpendicular component of the magnetic fringe field emanating from the edge of the ferromagnet. We demonstrate that the local fringe field from the ferromagnetic element inducing a Hall voltage improves the Hall sensitivity (4.5 Omega/Oe). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH MAGNETORESISTANCE DEVICE Local Hall effect in a hybrid InSb cross junction Article 10.1002/pssa.200304548 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, no.8, pp.1980 - 1982 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 201 8 1980 1982 scie scopus 000222401400091 2-s2.0-3142763949 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper MAGNETORESISTANCE DEVICE InSb fringe field Hall voltage