Hwang, WJ Lee, HJ Lee, KI Kim, YM Chang, JY Han, SH Shin, MW Kim, YK Lee, WY 2024-01-21T07:07:38Z 2024-01-21T07:07:38Z 2021-09-02 2004-05 0304-8853 https://pubs.kist.re.kr/handle/201004/137620 The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER Spin transport in a lateral spin-injection device with an FM/Si/FM junction Article 10.1016/j.jmmm.2003.12.1169 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.1915 - 1916 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 272 1915 1916 scie scopus 000222236800119 2-s2.0-23044479375 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper hybrid ferromagnetic metal/semiconductor spin injection spin-polarized transport