Lee, KB Lee, KH Ju, BK 2024-01-21T07:07:58Z 2024-01-21T07:07:58Z 2021-09-02 2004-05 0272-8842 https://pubs.kist.re.kr/handle/201004/137626 Single-layered PtRhOy thin films were investigated as electrode barriers for ferroelectric Pb(ZrxTil-x)O-3 (PZT) (x = 0.2-0.8) thin film capacitors. PtRhOY thin films were deposited directly on n+Si wafers by means of the reactive sputtering method. PtRhOY/PZT/PtRhOY/n+Si capacitors showed well-defined P-Ehysteresis loops. The remanent polarizations, as well as the polarization loss after the switching repetitions, were varied with the ratio of Zr/Ti. Especially, Pb(Zr0.4Ti0.6)O-3 thin film capacitor showed the superior ferroelectric properties, such as the P-E hysteresis characteristics and the polarization fatigue. The typical remanent polarization and the coercive field of this capacitor were 22 muC/cm(2) and 87 kV/cm, respectively, and the polarization loss was only less than 5% after 10(11) switching repetitions. From the measurement of the depth profile and the microstructure of this capacitor, it could be convinced that single-layered PtRhOY films behaved as high quality electrode barriers for PZT thin film capacitors. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved. English ELSEVIER SCI LTD ELECTRICAL-PROPERTIES MEMORIES Compositional dependence of the properties of ferroelectric Pb(ZrxTi1-x)O-3 thin film capacitors deposited on single-layered PtRhOY electrode barriers Article 10.1016/j.ceramint.2003.12.094 1 CERAMICS INTERNATIONAL, v.30, no.7, pp.1543 - 1546 CERAMICS INTERNATIONAL 30 7 1543 1546 scie scopus 000224168300092 2-s2.0-4344687473 Materials Science, Ceramics Materials Science Article; Proceedings Paper ELECTRICAL-PROPERTIES MEMORIES PtRhOy electrode barrier Pb(ZrxTi1-x)O-3 ferroelectric thin film