Lee, K. I. Lee, J. H. Lee, W. Y. Shin, K. H. Ri, H. -C. Lee, B. C. Rhie, K. 2024-01-21T07:08:10Z 2024-01-21T07:08:10Z 2021-09-02 2004-05 0304-8853 https://pubs.kist.re.kr/handle/201004/137630 It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface. (C) 2003 Published by Elsevier B.V. English ELSEVIER DEPENDENCE JUNCTIONS Quenching of tunneling magnetoresistance at low temperatures Article 10.1016/j.jmmm.2003.12.282 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.E1493 - E1494 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 272 E1493 E1494 scie scopus 000202897200577 2-s2.0-23144457403 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article DEPENDENCE JUNCTIONS tunneling magnetoresistance magnetic tunnel junction