Jang, SH Kang, T Lee, JH Kim, KY 2024-01-21T07:08:52Z 2024-01-21T07:08:52Z 2021-09-02 2004-05 0304-8853 https://pubs.kist.re.kr/handle/201004/137643 The properties of Si-based magnetic tunnel transistor (MTT) with high transfer ratio are presented. MTTs were prepared on Si(100) substrates by magnetron sputter deposition. Magnetocurrent ratios of 53-55% and high transfer ratios of (1-2) x 10(-4) for emitter-base bias 1.5-2 V were obtained at 77 K. High collector current value of about 0.9 muA for 2 V was also obtained. (C) 2003 Published by Elsevier B.V. English ELSEVIER SCIENCE BV Si-based magnetic tunnel transistor with high transfer ratio Article 10.1016/j.jmmm.2003.12.707 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.1930 - 1932 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 272 1930 1932 scie scopus 000222236800126 2-s2.0-21044433878 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper spin valve tunnel junctions transistor