박진범 고동완 박용주 오형택 신춘교 김영미 박일우 변동진 이정일 2024-01-21T07:12:45Z 2024-01-21T07:12:45Z 2021-09-06 2004-04 1225-0562 https://pubs.kist.re.kr/handle/201004/137713 The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 nm thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of 260 °C by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 ㎛/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The Tc of the Ga1-xMnxAs films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the TC becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer. 한국재료학회 저온 분자선 에피택시법을 이용한 GaMnAs 자성반도체 성장 및 특성 연구 A Study on Growth and Characterization of Magnetic Semiconductor GaMnAs Using LT-MBE Article 2 한국재료학회지, v.14, no.4, pp.235 - 238 한국재료학회지 14 4 235 238 kci ART000931558 GaMnAs LT-MBE V/III ratio As2 GaMnAs LT-MBE V/III ratio As2