김형석 서주영 박찬경 이상준 노삼규 송진동 박용주 이정일 2024-01-21T07:33:06Z 2024-01-21T07:33:06Z 2021-09-06 2004-03 1738-8228 https://pubs.kist.re.kr/handle/201004/137811 Self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and the growth characteristics of QDs were studied using field emission gun-electron transmission microscope. The shapes and optical properties of QDs changed according to spacer layers thickness due to the strain between InAs and GaAs layers. The QDs with 50 nm thick GaAs spacer layers were distributed randomly along the growth direction and changed from dome to flat-pyramidal shape after capping with GaAs. However, QDs with 10 nm thick spacer layers were vertically aligned up to the fifth period and the dome-shape was maintained after capping. The density, distribution and crystalline defects depending on growth conditions were also investigated. Korean 대한금속·재료학회 자발성형 InAs/GaAs 양자점의 구조 및 성장 특성 Growth Characteristics of Self-assembled InAs/GaAs Quantum Dots Article 2 대한금속·재료학회지, v.42, no.3, pp.285 - 291 대한금속·재료학회지 42 3 285 291 kci ART001188393 Quantum dot InAs/GaAs Self-assembly Transmission Electron Microscopy