Lee, SJ Noh, SK Choe, JW Lee, UH Hong, SC Lee, JI 2024-01-21T07:33:25Z 2024-01-21T07:33:25Z 2021-09-02 2004-03 0021-4922 https://pubs.kist.re.kr/handle/201004/137817 We report a high-response normal-incidence infrared photodetector based on the bound-to-continuum transition fabricated on the self-assembled i-InAs/n-GaAs quantum-dot (QD) heterostructure doped in GaAs barrier with no current blocking barrier. The photoresponse characteristics have been confirmed by distinct methods using a SiC globar source and a blackbody radiation source. From the blackbody system, the responsivity of 1750 mA/W at a peak wavelength of similar to4.7 mum (21 K) has been achieved, which is much higher than that reported on the n-InAs/i-GaAs QD-based infrared photodetectors doped in QDs with additional barrier. English JAPAN SOC APPLIED PHYSICS ROOM-TEMPERATURE DETECTORS OPERATION LAYER High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier Article 10.1143/JJAP.43.1218 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.3, pp.1218 - 1220 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 43 3 1218 1220 scie scopus 000220640700074 2-s2.0-2442600506 Physics, Applied Physics Article ROOM-TEMPERATURE DETECTORS OPERATION LAYER indium arsenide quantum dot infrared photodetector responsivity detectivity