Kim, YT Lee, GY 2024-01-21T07:33:38Z 2024-01-21T07:33:38Z 2021-09-02 2004-03 0031-8965 https://pubs.kist.re.kr/handle/201004/137821 An equivalent circuit model for the switching performance of a spin bipolar transistor composed of a nonmagnetic metal film (N) sandwiched between two ferromagnetic metal films (F1 and F2) is suggested. The 'ON' or 'OFF' operation of this equivalent circuit model is simulated depending on the orientation of the magnetization of F1 and F2 rather than on the strength of the external magnetic field. Changing the coupling coefficient, by tuning the ratio of two inductances (L1 : L2) like a transformer and a parallel variable resistance R4 connected to L2 at the collector region, one can explain the magnetic resistance ratio based on the orientation of spin-polarized electrons. The simulation results show that the electrical performance is consistent with the physical operation of the spin bipolar transistor. English WILEY-V C H VERLAG GMBH INJECTION FILMS POLARIZATION METALS Equivalent circuit model for the electrical analysis of a spin bipolar transistor Article 10.1002/pssa.200306709 1 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, no.4, pp.808 - 814 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 4 808 814 scie scopus 000220616600032 2-s2.0-1942442499 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article INJECTION FILMS POLARIZATION METALS bipolar spin transistor coupling coefficient inductance of transformer on/off operation PSPICE