이정아 이윤희 문승일 주병권 2024-01-21T07:36:29Z 2024-01-21T07:36:29Z 2021-09-06 2004-02 1226-7945 https://pubs.kist.re.kr/handle/201004/137874 In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron emission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ㎛ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilting the substrate, we made CNTs emitters both with and without SiO2 layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V. 한국전기전자재료학회 집적화된 3 극형 탄소 나노 튜브 전자 방출원의 제작 Fabrication of Integrated Triode-type CNT Field Emitters Article 2 전기전자재료학회논문지, v.17, no.2, pp.212 - 216 전기전자재료학회논문지 17 2 212 216 kci ART001089855 CNT Field emitter Triode Sidewall protector