Kim, HB Son, JH Whang, CN Chae, KH 2024-01-21T07:37:17Z 2024-01-21T07:37:17Z 2021-09-02 2004-02 0168-583X https://pubs.kist.re.kr/handle/201004/137889 Si layer between SiO2 layers has been changed from amorphous state to other state containing Si nanocrystals by ion beam mixing and subsequent annealing at high temperature in N-2, ambient. This change was measured by ellipsometric spectroscopy. The fitting of spectra was carried out using effective medium approximation model for the sample containing Si nanocrystals. The structural change of Si layer was confirmed by cross-sectional high-resolution transmission electron microscopy. (C) 2003 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV VISIBLE PHOTOLUMINESCENCE NANOCRYSTALLINE-SILICON SI RECRYSTALLIZATION LUMINESCENCE INTERFACE FILMS Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers Article 10.1016/j.nimb.2003.11.062 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.216, pp.367 - 371 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 216 367 371 scie scopus 000189222100061 2-s2.0-1042265817 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article; Proceedings Paper VISIBLE PHOTOLUMINESCENCE NANOCRYSTALLINE-SILICON SI RECRYSTALLIZATION LUMINESCENCE INTERFACE FILMS ion beam mixing ellipsometric spectroscopy transmission electron microscopy Si nanocrystals